A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...

Duke engineers show how a common device architecture used to test 2D transistors overstates their performance prospects in real-world devices.

GaN power transistors can shrink AC‑DC power supplies and cut losses but, to get the best out of them, their gate drive waveform needs careful attention. As a German team pointed out at ISSCC, GaN ...

Two distinct structures have been developed for the enhancement mode of GaN-based high-electron–mobility transistors (HEMTs). These two modes are the metal-insulator–semiconductor (MIS) structure, 2 ...

Newly developed world´s smallest GaN surface-mount package DFN 8x8 (8 x 8 mm x 1.25 mm, with a 43% footprint compared to our conventional TO-220 package products) optimized for GaN power transistors ...

GaN power transistors are becoming the gold standard for fast compact mains power switching – GaN HEMTs have no reverse recovery charge and can be designed with low on-resistance and low parasitic ...

Multilevel nonvolatile transistor memories were fabricated using star-shaped poly((4-diphenylamino)benzyl methacrylate) (star-PTPMA) electret dielectric for charge storage and ...

Advanced Micro Devices has developed two sets of next-generation transistors using different approaches that produce higher levels of performance than conventional transistors, the company said at the ...

This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs. The ...

OSAKA, Japan--(BUSINESS WIRE)--Panasonic Corporation today announced that it will launch the industry's smallest enhancement-mode[1] gallium nitride (GaN)[2] power transistors (X-GaN TM)** package.